Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors
Identifieur interne : 000068 ( France/Analysis ); précédent : 000067; suivant : 000069Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors
Auteurs : R. A. Puglisi [Italie] ; S. A. Lombardo [Italie] ; C. Spinella [Italie] ; S. U. Campisano [Italie] ; H. Monchoix [France] ; P. Rabinzohn [France]Source :
- Solid State Electronics [ 0038-1101 ] ; 1999.
Abstract
We compare polysilicon emitter bipolar transistors fabricated by using different treatments of the interface between single crystal and polycrystalline Si (polysilicon) in the emitter region. One of the treatments consisted in an in situ cleaning of the silicon surface performed in the deposition chamber prior to the polysilicon deposition, resulting in an oxide free interface. A detailed structural and electrical characterization of transistors with and without an oxide free interface is presented. It is shown that, even if common emitter current gain decrease is observed, a strong improvement of base resistance and breakdown voltage can be achieved, while maintaining noticeable high frequency characteristics.
Url:
DOI: 10.1016/S0038-1101(99)00162-8
Affiliations:
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000905
- to stream Main, to step Curation: 000905
- to stream Main, to step Exploration: 000583
- to stream France, to step Extraction: 000068
Links to Exploration step
ISTEX:B88A17F7B15875E1BFB50ADAE0C482DB666EC686Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors</title><author><name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name></author><author><name sortKey="Lombardo, S A" sort="Lombardo, S A" uniqKey="Lombardo S" first="S. A." last="Lombardo">S. A. Lombardo</name></author><author><name sortKey="Spinella, C" sort="Spinella, C" uniqKey="Spinella C" first="C." last="Spinella">C. Spinella</name></author><author><name sortKey="Campisano, S U" sort="Campisano, S U" uniqKey="Campisano S" first="S. U." last="Campisano">S. U. Campisano</name></author><author><name sortKey="Monchoix, H" sort="Monchoix, H" uniqKey="Monchoix H" first="H." last="Monchoix">H. Monchoix</name></author><author><name sortKey="Rabinzohn, P" sort="Rabinzohn, P" uniqKey="Rabinzohn P" first="P." last="Rabinzohn">P. Rabinzohn</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:B88A17F7B15875E1BFB50ADAE0C482DB666EC686</idno><date when="1999" year="1999">1999</date><idno type="doi">10.1016/S0038-1101(99)00162-8</idno><idno type="url">https://api.istex.fr/document/B88A17F7B15875E1BFB50ADAE0C482DB666EC686/fulltext/pdf</idno><idno type="wicri:Area/Main/Corpus">000905</idno><idno type="wicri:Area/Main/Curation">000905</idno><idno type="wicri:Area/Main/Exploration">000583</idno><idno type="wicri:explorRef" wicri:stream="Main" wicri:step="Exploration">000583</idno><idno type="wicri:Area/France/Extraction">000068</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors</title><author><name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>Dipartimento di Fisica dell'Università, Unità INFM, Corso Italia, 57, I-95129 Catania</wicri:regionArea><wicri:noRegion>I-95129 Catania</wicri:noRegion></affiliation><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Stradale Primosole, 50, I-95121 Catania</wicri:regionArea><wicri:noRegion>I-95121 Catania</wicri:noRegion></affiliation><affiliation></affiliation><affiliation wicri:level="1"><country wicri:rule="url">Italie</country></affiliation></author><author><name sortKey="Lombardo, S A" sort="Lombardo, S A" uniqKey="Lombardo S" first="S. A." last="Lombardo">S. A. Lombardo</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Stradale Primosole, 50, I-95121 Catania</wicri:regionArea><wicri:noRegion>I-95121 Catania</wicri:noRegion></affiliation></author><author><name sortKey="Spinella, C" sort="Spinella, C" uniqKey="Spinella C" first="C." last="Spinella">C. Spinella</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Stradale Primosole, 50, I-95121 Catania</wicri:regionArea><wicri:noRegion>I-95121 Catania</wicri:noRegion></affiliation></author><author><name sortKey="Campisano, S U" sort="Campisano, S U" uniqKey="Campisano S" first="S. U." last="Campisano">S. U. Campisano</name><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>Dipartimento di Fisica dell'Università, Unità INFM, Corso Italia, 57, I-95129 Catania</wicri:regionArea><wicri:noRegion>I-95129 Catania</wicri:noRegion></affiliation><affiliation wicri:level="1"><country xml:lang="fr">Italie</country><wicri:regionArea>Consiglio Nazionale delle Ricerche (CNR), Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Stradale Primosole, 50, I-95121 Catania</wicri:regionArea><wicri:noRegion>I-95121 Catania</wicri:noRegion></affiliation></author><author><name sortKey="Monchoix, H" sort="Monchoix, H" uniqKey="Monchoix H" first="H." last="Monchoix">H. Monchoix</name><affiliation wicri:level="3"><country xml:lang="fr">France</country><wicri:regionArea>Applied Materials, France-11B, Chemin de La Dhuy, 38240 Meylan</wicri:regionArea><placeName><region type="region" nuts="2">Auvergne-Rhône-Alpes</region><region type="old region" nuts="2">Rhône-Alpes</region><settlement type="city">Meylan</settlement></placeName></affiliation></author><author><name sortKey="Rabinzohn, P" sort="Rabinzohn, P" uniqKey="Rabinzohn P" first="P." last="Rabinzohn">P. Rabinzohn</name><affiliation wicri:level="3"><country xml:lang="fr">France</country><wicri:regionArea>Applied Materials, France-11B, Chemin de La Dhuy, 38240 Meylan</wicri:regionArea><placeName><region type="region" nuts="2">Auvergne-Rhône-Alpes</region><region type="old region" nuts="2">Rhône-Alpes</region><settlement type="city">Meylan</settlement></placeName></affiliation></author></analytic><monogr></monogr><series><title level="j">Solid State Electronics</title><title level="j" type="abbrev">SSE</title><idno type="ISSN">0038-1101</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1999">1999</date><biblScope unit="volume">43</biblScope><biblScope unit="issue">11</biblScope><biblScope unit="page" from="2085">2085</biblScope><biblScope unit="page" to="2091">2091</biblScope></imprint><idno type="ISSN">0038-1101</idno></series><idno type="istex">B88A17F7B15875E1BFB50ADAE0C482DB666EC686</idno><idno type="DOI">10.1016/S0038-1101(99)00162-8</idno><idno type="PII">S0038-1101(99)00162-8</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0038-1101</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We compare polysilicon emitter bipolar transistors fabricated by using different treatments of the interface between single crystal and polycrystalline Si (polysilicon) in the emitter region. One of the treatments consisted in an in situ cleaning of the silicon surface performed in the deposition chamber prior to the polysilicon deposition, resulting in an oxide free interface. A detailed structural and electrical characterization of transistors with and without an oxide free interface is presented. It is shown that, even if common emitter current gain decrease is observed, a strong improvement of base resistance and breakdown voltage can be achieved, while maintaining noticeable high frequency characteristics.</div></front></TEI><affiliations><list><country><li>France</li><li>Italie</li></country><region><li>Auvergne-Rhône-Alpes</li><li>Rhône-Alpes</li></region><settlement><li>Meylan</li></settlement></list><tree><country name="Italie"><noRegion><name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name></noRegion><name sortKey="Campisano, S U" sort="Campisano, S U" uniqKey="Campisano S" first="S. U." last="Campisano">S. U. Campisano</name><name sortKey="Campisano, S U" sort="Campisano, S U" uniqKey="Campisano S" first="S. U." last="Campisano">S. U. Campisano</name><name sortKey="Lombardo, S A" sort="Lombardo, S A" uniqKey="Lombardo S" first="S. A." last="Lombardo">S. A. Lombardo</name><name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name><name sortKey="Puglisi, R A" sort="Puglisi, R A" uniqKey="Puglisi R" first="R. A." last="Puglisi">R. A. Puglisi</name><name sortKey="Spinella, C" sort="Spinella, C" uniqKey="Spinella C" first="C." last="Spinella">C. Spinella</name></country><country name="France"><region name="Auvergne-Rhône-Alpes"><name sortKey="Monchoix, H" sort="Monchoix, H" uniqKey="Monchoix H" first="H." last="Monchoix">H. Monchoix</name></region><name sortKey="Rabinzohn, P" sort="Rabinzohn, P" uniqKey="Rabinzohn P" first="P." last="Rabinzohn">P. Rabinzohn</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/Amerique/explor/CaltechV1/Data/France/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000068 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/France/Analysis/biblio.hfd -nk 000068 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/Amerique
|area= CaltechV1
|flux= France
|étape= Analysis
|type= RBID
|clé= ISTEX:B88A17F7B15875E1BFB50ADAE0C482DB666EC686
|texte= Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors
}}
| This area was generated with Dilib version V0.6.32. |  |